蒐索
| 靜態蓡數 | 符號 |
| Drain to Source Breakdown Voltage | BVDSS |
| Drain Leakage Current | IDSS |
| Gate Leakage Current | IGSS |
| Gate Threshold Voltage | VGS(th) |
| Drain to Source On Resistance | RDS(on) |
| Drain to Source On Voltage | VDS(on) |
| Body Diode Forward Voltage | VSD |
| Internal Gate Resistance | Rg |
| Input capacitance | Cies |
| Output capacitance | Coes |
| Reverse transfer capacitance | Cres |
| Transconductance | gfs |
| Gate to Source Plateau Voltage | Vgs(pl) |
| 動態蓡數 | 符號 |
| Turn-on delay time | td(on) |
| Rise time | tr |
| Turn-off delay time | td(off) |
| Fall time | tf |
| Turn-on energy | Eon |
| Turn-off energy | Eoff |
| Diode reverse recovery time | trr |
| Diode reverse recovery charge | Qrr |
| Diode peak reverse recovery current | Irrm |
| Diode peak rate of fall of reverse recovery current |
dirr/dt |
| Total gate charge | QG |
| Gate-Emitter charge | QGC |
| Gate-Collector charge | QGE |
| 其(qi)他蓡數 | 符(fu)號 |
| thermal resistance | Rth |
| Unclamped Inductive Switching | UIS |
| Reverse biased safe operating area | RBSOA |
| Short circuit safe operation area | SCSOA |
